Visit Faraday at Samsung SAFE Forum 2020 (Virtual)

Time	USA: Oct 28th (Wed) China, EMEA, Korea, Japan: Oct 29th (Thu) Starts at 10am (Local time/CET for Europe)
Registration	USA: Get registered on SAFE forum page (USA) China, EMEA, Korea, Japan: Get registered on SAFE forum page

Presentation

• Platform-based Service and Application-specific IP Accelerate IoT ASIC Design
• Speaker: K.C. Wu, Vice President of R&D at Faraday
• Time: Opens at 12pm

For next-generation IoT devices, the features include AI computing, image processing, high-resolution display, and AR/VR. That will be the second wave to use FinFET technology to address high-performance and low-power requirements after mobile and HPC applications.

Faraday’s system-level service covers SoC development-evaluation platform, software service, SoC virtual platform, FPGA-to-ASIC conversion, and SoC hardware service. Customers can enable software development and evaluate SoC performance in early stage. On 14nm FinFET process, Faraday doesn’t only bring its latest SoCreative! VI™ platform but also develops application-specific IPs, including fundamental memory compilers and high-speed interfaces like MIPI, V-by-One and LPDDRx PHY. These IPs can also be customized to fit diversified IoT applications.

By integrating platform-based service, competitive IP portfolio, and Samsung’s innovative FinFET technology, IoT SoC development and product’s time to market will be speeded up.

 

Showcase

Faraday’s FinFET ASIC Design Solutions
Faraday’s FinFET ASIC solutions include the flexible business engagement model, optimized design flow, system-level platform based services, and application-specific IP solutions, enabling innovative SoC designs in FinFET process technologies efficiently. By collaborating seamlessly with our ecosystem of IP, EDA, manufacturing, packaging, and testing partners, we present the industry-leading FinFET ASIC turnkey solution to customers worldwide.