Hsinchu, Taiwan, September 18, 2019
Faraday Technology Corporation (TWSE: 3035), a leading ASIC design service and IP provider, today announced the number of its SoC design service projects has doubled for three consecutive years. These projects are mainly on 28nm and 40nm nodes featuring lower business entry barrier and competitive production cost compared with the advance processes.
28nm and 40nm process technologies are mainstream nodes in the current market; the cost of IP, mask, and wafers can be much lower than those on FinFET processes. Faraday, as an experienced SoC designer, has developed an efficient SoC design flow and a mature platform-based SoC design service to reduce both risk and time-to-market. Meanwhile, the company’s comprehensive, self-developed IP solutions for specific applications, are system-proven in real SoC ASICs. This powerful combination provides our customers the advantages of IP customization, efficient cost, and lower risk of mass production.
“We have been receiving a marked increase of SoC design projects on 28nm and 40nm nodes; these cover a wide range of applications including 5G, networking, AIoT, SSD, projector, multi-function printer, and barcode readers. Faraday has accumulated an abundance of SoC design experience and solutions; we are confident in our ability to meet the market’s demand in diversified fields on these process nodes”, said Flash Lin, COO of Faraday Technology.
About Faraday Technology Corporation
Faraday Technology Corporation (TWSE: 3035) is a leading ASIC design service and IP provider, certified to ISO 9001 and ISO 26262. The broad silicon IP portfolio includes I/O, Cell Library, Memory Compiler, ARM-compliant CPUs, DDR2/3/4, low-power DDR1/2/3, MIPI, V-by-One, USB 2.0/3.1 Gen 1, 10/100/1000 Ethernet, Serial ATA, PCI Express, and programmable SerDes, etc. Headquartered in Taiwan, Faraday has service and support offices around the world, including the U.S., Japan, Europe, and China. For more information, visit www.faraday-tech.com or follow Faraday on LinkedIn.
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