As a leading ASIC vendor, Faraday has accessed to the most advanced process technologies and supports the designs from legacy to FinFET processes, collaborating with the strategic foundry partners of Intel, Samsung and UMC. Customers can adopt the most advanced process technologies as well as cost-effective solutions for a wide range of applications.

Design enablement at Intel

Faraday has started co-working with Intel Foundry in developing the first project of Arm-based infrastructure platform SoC utilizing Intel 18A technology. Intel 18A brings industry first Power-Via in gate-all-around transistors, which promise enhancements in standard cell utilization and overall performance. By leveraging Intel’s differentiated process technologies, Faraday’s ASIC and DIS customers stand on benefit from accelerated time-to-market for leading-edge data center and HPC applications.

Technology Foundry Process Name Core Device I/O Device Max. Metal Layers
18Angstrom 18A 0.7V - Front-side14, Back-side 5

Design enablement at Samsung

Faraday has co-worked with Samsung and successfully taped-out ASIC projects on FinFET platforms. We provide value-added and tailored ASIC design solutions to help customers enable their innovative products in FinFET process technologies with comprehensive verified IP. The solutions target next-generation applications, such as artificial intelligence (AI), 5G/infrastructure networking, blockchain, cloud storage, high-performance computing (HPC), AR & VR, and high-end imaging.

Samsung Foundry has taken a revolutionary footprint to the foundry industry by implementing the innovative 3D-structure FinFET technology which is the industry's the most important technology milestone in recent 10 years into 14nm process transition for the superior performance/power/scaling benefit.

Technology Foundry Process Name Core Device I/O Device Max. Metal Layers
5nm LPE 0.75V 1.8V, 1.5V, 1.2V
14Cu
8nm LPU 0.75V 1.8V, 1.5V, 1.2V
14Cu
14nm LPU 0.8V 1.8V, 1.5V, 1.2V
13Cu

Design enablement at UMC

Faraday has been working with UMC to develop an extensive array of standard cell, I/O libraries and memory compilers for the mutual customers. The comprehensive offering of logic and mixed signal processes spans from 22nm technology to 0.5um specialty processes. Customers can conveniently access the most suitable libraries and process technologies, and thus choose from different process nodes, voltage options, and mixed mode technologies to meet their requirements for a wide range of applications including IoT, MCU, smart grid, MFP, projector, and networking.

Technology Foundry Process Name Core Device I/O Device High Voltage Max. Metal Layers
14nm LOGIC/MM-ULP/ULL 0.8V 1.8V   13Cu
22nm LOGIC/MM-ULP/ULL 0.8V 1.8V,2.5V   11Cu
28nm LOGIC/MM-HLP 1.05V 1.8V,2.5V   11Cu
28nm LOGIC/MM-HPC 0.9V 1.8V,2.5V   11Cu
28nm LOGIC/MM-HPC+ 0.9V 1.8V,2.5V   11Cu
40nm LOGIC/MM-LP 1.1V 1.8V,2.5V   11Cu
40nm LOGIC/MM-ULP 0.9V,1.1V 1.8V,2.5V   11Cu
40nm LOGIC/MM-ULP/SONOS 0.9V,1.1V 1.8V,2.5V   11Cu
55nm LOGIC/MM-LP 1.2V 2.5V   10Cu
55nm EFLASH-LP/SPLIT_GATE 1.2V 2.5V   10Cu
55nm LOGIC/MM-SP 1.0V 2.5V   10Cu
90nm LOGIC/MM-SP 1.0V,1.2V 1.8V,2.5V,3.3V   9Cu
0.11µm LOGIC/MM-L110AE 1.2V 2.5V,3.3V   8Al
0.11µm EFLASH/EE2PROM 1.2V 3.3V   8Al
0.153µm LOGIC/MM 1.8V 3.3V   6Al
0.162µm LOGIC GII 1.8V 3.3V   6Al
0.162µm LEHV162N 1.8V 5.5V 16V  
0.18µm LOGIC GII 1.8V 3.3V   6Al
0.18µm LOGIC -LL 1.8V 3.3V   6Al
0.18µm EHV18 1.8V 5.5V 16V 6Al
0.18µm EFLASH/EE2PROM-GII 1.8V 3.3V   6Al
0.18µm EFLASH -HJTC 1.8V 3.3V,5V   6Al
0.18µm BCD 1.8V 5V 12V~150V 6Al
0.22µm LOGIC 2.5V 3.3V   5Al
0.25µm LOGIC 2.5V 3.3V   5Al
0.3µm LOGIC 3.3V 5.0V   5Al
0.35µm LOGIC 3.3V 5.0V   5Al
0.35µm CDMOS 3.3V 5V 40V 5Al
0.35µm EFLASH 3.3V 5V   5Al
0.35µm EHV-8AB 3.3V   13.5V 5Al
0.45µm LOGIC 5V     3Al
0.5µm LOGIC 5V     3Al