As a leading ASIC vendor, Faraday has accessed to the most advanced process technologies and supports the designs from legacy to FinFET processes, collaborating with the strategic foundry partners of Intel, Samsung and UMC. Customers can adopt the most advanced process technologies as well as cost-effective solutions for a wide range of applications.
Design enablement at Intel
Faraday has started co-working with Intel Foundry in developing the first project of Arm-based infrastructure platform SoC utilizing Intel 18A technology. Intel 18A brings industry first Power-Via in gate-all-around transistors, which promise enhancements in standard cell utilization and overall performance. By leveraging Intel’s differentiated process technologies, Faraday’s ASIC and DIS customers stand on benefit from accelerated time-to-market for leading-edge data center and HPC applications.
Technology | Foundry Process Name | Core Device | I/O Device | Max. Metal Layers |
---|---|---|---|---|
18Angstrom | 18A | 0.7V | - | Front-side14, Back-side 5 |
Design enablement at Samsung
Faraday has co-worked with Samsung and successfully taped-out ASIC projects on FinFET platforms. We provide value-added and tailored ASIC design solutions to help customers enable their innovative products in FinFET process technologies with comprehensive verified IP. The solutions target next-generation applications, such as artificial intelligence (AI), 5G/infrastructure networking, blockchain, cloud storage, high-performance computing (HPC), AR & VR, and high-end imaging.
Samsung Foundry has taken a revolutionary footprint to the foundry industry by implementing the innovative 3D-structure FinFET technology which is the industry's the most important technology milestone in recent 10 years into 14nm process transition for the superior performance/power/scaling benefit.
Technology | Foundry Process Name | Core Device | I/O Device | Max. Metal Layers |
---|---|---|---|---|
5nm | LPE | 0.75V | 1.8V, 1.5V, 1.2V |
14Cu |
8nm | LPU | 0.75V | 1.8V, 1.5V, 1.2V |
14Cu |
14nm | LPU | 0.8V | 1.8V, 1.5V, 1.2V |
13Cu |
Design enablement at UMC
Faraday has been working with UMC to develop an extensive array of standard cell, I/O libraries and memory compilers for the mutual customers. The comprehensive offering of logic and mixed signal processes spans from 22nm technology to 0.5um specialty processes. Customers can conveniently access the most suitable libraries and process technologies, and thus choose from different process nodes, voltage options, and mixed mode technologies to meet their requirements for a wide range of applications including IoT, MCU, smart grid, MFP, projector, and networking.
Technology | Foundry Process Name | Core Device | I/O Device | High Voltage | Max. Metal Layers |
---|---|---|---|---|---|
14nm | LOGIC/MM-ULP/ULL | 0.8V | 1.8V | 13Cu | |
22nm | LOGIC/MM-ULP/ULL | 0.8V | 1.8V,2.5V | 11Cu | |
28nm | LOGIC/MM-HLP | 1.05V | 1.8V,2.5V | 11Cu | |
28nm | LOGIC/MM-HPC | 0.9V | 1.8V,2.5V | 11Cu | |
28nm | LOGIC/MM-HPC+ | 0.9V | 1.8V,2.5V | 11Cu | |
40nm | LOGIC/MM-LP | 1.1V | 1.8V,2.5V | 11Cu | |
40nm | LOGIC/MM-ULP | 0.9V,1.1V | 1.8V,2.5V | 11Cu | |
40nm | LOGIC/MM-ULP/SONOS | 0.9V,1.1V | 1.8V,2.5V | 11Cu | |
55nm | LOGIC/MM-LP | 1.2V | 2.5V | 10Cu | |
55nm | EFLASH-LP/SPLIT_GATE | 1.2V | 2.5V | 10Cu | |
55nm | LOGIC/MM-SP | 1.0V | 2.5V | 10Cu | |
90nm | LOGIC/MM-SP | 1.0V,1.2V | 1.8V,2.5V,3.3V | 9Cu | |
0.11µm | LOGIC/MM-L110AE | 1.2V | 2.5V,3.3V | 8Al | |
0.11µm | EFLASH/EE2PROM | 1.2V | 3.3V | 8Al | |
0.153µm | LOGIC/MM | 1.8V | 3.3V | 6Al | |
0.162µm | LOGIC GII | 1.8V | 3.3V | 6Al | |
0.162µm | LEHV162N | 1.8V | 5.5V | 16V | |
0.18µm | LOGIC GII | 1.8V | 3.3V | 6Al | |
0.18µm | LOGIC -LL | 1.8V | 3.3V | 6Al | |
0.18µm | EHV18 | 1.8V | 5.5V | 16V | 6Al |
0.18µm | EFLASH/EE2PROM-GII | 1.8V | 3.3V | 6Al | |
0.18µm | EFLASH -HJTC | 1.8V | 3.3V,5V | 6Al | |
0.18µm | BCD | 1.8V | 5V | 12V~150V | 6Al |
0.22µm | LOGIC | 2.5V | 3.3V | 5Al | |
0.25µm | LOGIC | 2.5V | 3.3V | 5Al | |
0.3µm | LOGIC | 3.3V | 5.0V | 5Al | |
0.35µm | LOGIC | 3.3V | 5.0V | 5Al | |
0.35µm | CDMOS | 3.3V | 5V | 40V | 5Al |
0.35µm | EFLASH | 3.3V | 5V | 5Al | |
0.35µm | EHV-8AB | 3.3V | 13.5V | 5Al | |
0.45µm | LOGIC | 5V | 3Al | ||
0.5µm | LOGIC | 5V | 3Al |