The 55ULP IPs include Faraday PowerSlash™ IPs, which are the fundamental building blocks for a low-power design, including multi-Vt libraries and a comprehensive power management kit. The featured Turbo Mode effectively shifts the performance curve, helping MCU cores to achieve 2x performance or reduce dynamic power by 40% at nominal clock rates on UMC 55ULP eFlash technology.

 

Item LVT C60 RVT C60 HVT C60 HVT C90
HVT C60
(PowerSlash™ with Turbo Mode)
HVT C90
(PowerSlash™ with Turbo Mode)
uHVT C90
(PowerSlash™ with Turbo Mode)
Note
6T Base library -
Power slash kit - - - -
ECO library -
8T Base library -
Power slash kit - - - -
ECO library -
TGO
(RTC)
Base library - - - - - - I/O device

 

Features

  • 6/8 track high cell for high density and low power requirement
  • Up to 80% from RVT to uHVT
  • Up to 21% from C60 to C90 for HVT
  • Same footprint cell layout for cell fusion for synthesis and P&R
  • Wide operation voltage: 1.2V - 0.9V; Vcc_min= 0.81v
  • Support Turbo mode to boost performance
  • 9T TGO cell library for RTC and always-on circuit

 

Memory Compiler & I/O IP

Item Feature Readiness
Memory Compiler HVT SPRAM
HVT 1PRF
HVT VIA ROM
HVT power gating SPRAM
HVT power gating 1PRF
HVT power gating VIA ROM
HVT power gating VIA ROM
uHVT SPRAM (PowerSlash™ with Turbo Mode)
uHVT 1PRF (PowerSlash™ with Turbo Mode)
uHVT VIA (PowerSlash™ with Turbo Mode)
HVT SPRAM (PowerSlash™ with Turbo Mode)
HVT 1PRF (PowerSlash™ with Turbo Mode)
HVT VIA ROM (PowerSlash™ with Turbo Mode)
I/O 5VT IO
MV IO
L/H freq. Xtal IO
RTC IO
3.3V GPIO

 

Functional IP

Item Feature Readiness
Bandgap Vin : 3.6v ~ 1.0v
Output : 0.75v ± 3%
IQ : 0.3uA
LDO Vin : 3.6v ~ 1.0v
Output : 0.9v ± 5%
IQ : 0.8uA
LDO Vin : 3.6v ~ 1.3v
Output : 0.9v /1.2v ± 5% (switchable)
IQ : 1uA
Voltage detector
Vin : 3.6v ~ 3.0v
Low power consumption
SAR ADC 12 bit, 1M samples/s
VCC: 3.6 ~ 2.7V
VDD: 1.2 ~ 0.9V
R-2R DAC 10 bit, 1MHz, rail to rail output
RC OSC (HF) Output : 32M/16M/8M/4M/2M Hz
I < 100uA
RC OSC (LF) Output : 32KHz
I < 10uA
USB 2.0 OTG PHY